Gilson I. Wirth received the B.S.E.E and M.Sc. degrees from the Universidade Federal do Rio Grande do Sul,Brazil, in 1990 and 1994, respectively. In 1999 he received the Dr.-Ing. degree in Electrical Engineering from the University of Dortmund, Dortmund, Germany.

He is currently a professor at the Electrical Engineering Department at the Universidade Federal do Rio Grande do Sul - UFRGS (since January 2007).

From 2000 to 2002 he worked as lecturer and researcher in the field of microelectronics at the Informatics Institute, Universidade Federal doRio Grandedo Sul (UFRGS).

From July 2002 to December 2006 he was professor and head of the Computer Engineering Department, Universidade Estadual doRio Grandedo Sul (UERGS). He founded the research group in micro- and nano-electronics at UERGS.

In July, August and December 2001 he was at Motorola,Austin,Texas, leading the team working in CMOS process technology transfer to CEITEC,Porto Alegre,Brazil. The technology transfer was funded by FAPERGS under grant number 01/1093.3 (first phase of technology transfer) and 01/1628.9 (second phase of technology transfer).

In February and March 2002 he was at the Corporate Research Department of Infineon Technologies,Munich,Germany, working as guest researcher on low-frequency noise in deep submicron MOS devices.

His research work is focused on reliability and yield of MOS devices and circuits, including low-frequency noise, bias temperature instability (BTI), radiation effects, and design techniques to improve yield and reliability.


E-Mail: gilson dot wirth at ece dot ufrgs dot br


NEW: 2015 DAAD Summer School on Microelectronics.

Porto Alegre, July 12 to 29, 2015.


Major Publications


An updated list of publication may be found at


International Cooperation

Infineon Technologies (Munich, Germany): Study of Low-Frequency Noise and Variability in Integrated Circuits in Deep-Sub Micron Technologies.

Muenster University of Applied Sciences: Design and Modeling of Resilient Computing Systems in CMOS VLSI.

University of Paderborn: Sensors for Systems on Chip.


Arizona State University - ASU (Tempe, AZ): Reliability of MOSFETs at the device level, focusing on BTI, RTN an variability effects.

Texas Instruments (Dallas, TX): Study of Low-Frequency Noise in Integrated Circuits in Deep-Sub Micron Technologies.


 NXP Semiconductors (Eindhoven, NL):

 Low-frequency noise in MOSFETs.


 IMEC (Leuven, Belgium):

Reliability and Technology-Aware Design in Nanometer Scale Integrated Circuits, focusing on BTI.